dec . 20 1 4 . version 1 . 6 magnachip semiconductor ltd . 1 md p 13 n50 g/MDF13N50G n - channel mosfet 50 0 v absolute maximum ratings (ta = 25 o c) characteristics symbol mdp13n50g MDF13N50G unit drain - source voltage v dss 500 v drain - source voltage @ tjmax v dss @ t jmax 55 0 v gat e - source voltage v gss 30 v continuous drain current t c =25 o c i d 13 13* a t c = 10 0 o c 8.2 8.2* a pulsed drain current (1) i dm 52 52* a power dissipation t c =25 o c p d 187 42 w w/ o c derate above 25 o c 1.49 0.33 repetitive avalanche energy (1) e ar 18.7 mj peak diode recovery dv/dt (3) d v/dt 4.5 v/ns single pulse avalanche energy (4) e as 580 mj junction and storage temperature range t j , t stg - 55~150 o c * id limited by maximum junction temperature thermal characteristics characteristics symbol m dp13n50g MDF13N50G unit thermal resistance, junction - to - ambient (1) r ja 62.5 62.5 o c/w thermal resistance, junction - to - case (1) r jc 0.67 3.0 md p 13 n50 g / MDF13N50G n - channel mosfet 500 v, 1 3 .0 a, 0. 5 ? features ? v ds = 500 v ? v ds = 55 0 v @ tjmax ? i d = 1 3 .0 a @ v gs = 10v ? r ds(on) < 0. 5 @ v gs = 10v applications ? power supply ? hid ? lighting general description the se n - channel mosfet are produced using advanced magnachips mosfe to - 220f mdf series to - 220 mdp series d g s
dec . 20 1 4 . version 1 . 6 magnachip semiconductor ltd . 2 md p 13 n50 g/MDF13N50G n - channel mosfet 50 0 v ordering information p art number temp. range package packing rohs status md p13 n 5 0 g th - 55~150 o c to - 220 tube halogen free md f13 n 50g th - 55~150 o c to - 220f tube halogen free electrical characteristics (ta =25 o c) characteristics symbol test condition min typ max unit static characteristics drain - source breakdown voltage bv dss i d = 250a, v gs = 0v 500 - - v gate threshold voltage v gs(th) v ds = v gs , i d = 2 50a 3.0 - 5.0 drain cut - off current i dss v ds = 500 v, v gs = 0v - - 1 a gate leakage current i gss v gs = 30 v, v ds = 0v - - 1 00 n a drain - source on resistance r ds(on) v gs = 10v, i d = 6. 5 a 0.39 0. 5 forward transconductance g fs v ds = 4 0 v, i d = 6.5 a - 1 3 - s dynamic characteristics total gate charge q g v ds = 400 v, i d = 13a , v g s = 10 v (3 ) - 33 nc gate - source charge q gs - 10.4 gate - drain charge q gd - 13 input capacitance c iss v ds = 2 5v, v gs = 0v, f = 1.0mhz - 1390 pf reverse transfer capacitance c rss - 6.3 output capacitance c oss - 1 73 turn - on delay time t d(on) v gs = 10v, v ds = 250 v, i d = 13a , r g = 25 (3 ) - 57 ns rise time t r - 54 t ur n - off delay time t d(off) - 112 fall time t f - 37 drain - source body diode characteristics maximum continuous drain to source diode forward current i s - 13 - a source - drain diode forward voltage v sd i s = 1 3 a , v gs = 0v - 1. 4 v body diode reverse recovery time t rr i f = 1 3 a , dl/dt = 100a/s (3 ) - 3 25 ns body diode reverse recovery charge q rr - 2.9 c note : 1. p ulse width is based on r j c & r j a and the maximum allowed junction temperatu re of 150c. 2 . pulse test: pulse width 300us, duty cycle 2%, pulse width limited by junction temperature tj(max)=150 c. 3. i s d 9.0 a, di/dt 200a/us, v dd =50v, r g =25 , starting tj=25 c 4. l= 6.2 mh, i as = 13 .0 a, v dd =50v, , r g =25 , starting tj=25 c
dec . 20 1 4 . version 1 . 6 magnachip semiconductor ltd . 3 md p 13 n50 g/MDF13N50G n - channel mosfet 50 0 v fig. 5 transfer characteristics fig .1 on - region characteristics fig. 2 on - resistance variation with drain current and gate voltage fig. 3 on - resistance variation with temperature fig. 4 breakdown voltage variation vs. temperature fig. 6 body diode forward voltage variation with source curr ent and temperature 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 100 25 150 notes : 1. v gs = 0 v 2. i d = 250 ? i dr reverse drain current [a] v sd , source-drain voltage [v] 5 10 15 20 25 30 35 0.4 0.5 0.6 0.7 0.8 0.9 v gs =10.0v v gs =20v r ds(on) [? ] i d ,drain current [a] 4 5 6 7 8 1 10 25 * notes ; 1. v ds =30v 150 -55 i d [a] v gs [v] 5 10 15 20 5 10 15 20 25 30 notes 1. 250 ? 2. t c =25 v gs =5.5v =6.0v =6.5v =7.0v =8.0v =10.0v i d ,drain current [a] v ds ,drain-source voltage [v] -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : 1. v gs = 0 v 2. i d = 250 ? bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes : 1. v gs = 10 v 2. i d = 6.5a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c]
dec . 20 1 4 . version 1 . 6 magnachip semiconductor ltd . 4 md p 13 n50 g/MDF13N50G n - channel mosfet 50 0 v fig. 7 gate charge characteristics fig. 8 capacitance characteristics fig. 9 maximum safe operating area mdp13n50g(to - 220) fig. 1 1 transient thermal response c urve mdp13n50g(to - 220) fig. 10 maximum safe operating area MDF13N50G(to - 220f) fig. 1 2 transient thermal response curve MDF13N50G(to - 220f) 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 notes : duty factor, d=t 1 /t 2 peak t j = p dm * z jc * r jc (t) + t c r jc =0.67 /w single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , rectangular pulse duration [sec] 0 5 10 15 20 25 30 35 40 0 2 4 6 8 10 400v 250v 100v note : i d = 13.0a v gs , gate-source voltage [v] q g , total gate charge [nc] 10 -1 10 0 10 1 10 2 10 -2 10 -1 10 0 10 1 10 2 10 ? s 100 ? s 100 ms dc 10 ms 1 ms operation in this area is limited by r ds(on) single pulse t j =max rated t c =25 i d , drain current [a] v ds , drain-source voltage [v] 0.1 1 10 0 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes ; 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v] 10 -1 10 0 10 1 10 2 10 -2 10 -1 10 0 10 1 10 2 10 ? s 100 ? s 100 ms dc 10 ms 1 ms operation in this area is limited by r ds(on) single pulse t j =max rated t c =25 i d , drain current [a] v ds , drain-source voltage [v] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 notes : duty factor, d=t 1 /t 2 peak t j = p dm * z jc * r jc (t) + t c r jc =3.0 /w single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , rectangular pulse duration [sec]
dec . 20 1 4 . version 1 . 6 magnachip semiconductor ltd . 5 md p 13 n50 g/MDF13N50G n - channel mosfet 50 0 v fig .1 3 single pulse maximum power dissipation mdp13n50g(to - 220) fig. 1 5 maximum drain current v s. case temperature fig .1 4 single pulse maximum power dissipation MDF13N50G (to - 220f) 1e-5 1e-4 1e-3 0.01 0.1 1 10 0 2000 4000 6000 8000 10000 12000 14000 16000 18000 20000 22000 24000 single pulse r thjc = 0.67 t c = 25 power (w) pulse width (s) 25 50 75 100 125 150 0 2 4 6 8 10 12 14 i d , drain current [a] t c , case temperature [ ] 1e-5 1e-4 1e-3 0.01 0.1 1 10 0 2000 4000 6000 8000 10000 12000 14000 single pulse r thjc = 3.0 t c = 25 power (w) pulse width (s)
dec . 20 1 4 . version 1 . 6 magnachip semiconductor ltd . 6 md p 13 n50 g/MDF13N50G n - channel mosfet 50 0 v ? physical dimension 3 leads , to - 220 dimensions are in millimeters unless otherwise specified
dec . 20 1 4 . version 1 . 6 magnachip semiconductor ltd . 7 md p 13 n50 g/MDF13N50G n - channel mosfet 50 0 v ? physical dimension 3 leads , to - 220f d imensions are in millimeters unless otherwise specified symbol min nom max a 4.50 4.93 b 0.63 0.91 b1 1.15 1.47 c 0.33 0.63 d 15.47 16.13 e 9.60 10.71 e 2.54 f 2.34 2.84 g 6.48 6.90 l 12.24 13.72 l1 2.79 3.67 q 2.52 2.96 q1 3.10 3.50 r 3.00 3.55
dec . 20 1 4 . version 1 . 6 magnachip semiconductor ltd . 8 md p 13 n50 g/MDF13N50G n - channel mosfet 50 0 v d isclaimer: the products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any product can reaso nably be expected to result in a personal injury. sellers customers using or selling sellers products for use in such applications do so at their own risk and agree to fully defend and indemnify seller. magnachip reserves the right to change th e specifications and circuitry without notice at any time. magnachip does not consider responsibility for use of any circuitry other than circuitry entirely included in a magnachip product. is a registered trademark of magnachip semiconductor lt d.
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